IRF8734TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Power Dissipation :

2.5W

Radiation Hardening :

No

Terminal Form :

Gull wing

Rise Time :

16ns

Resistance :

3.5mOhm

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

15 ns

JESD-609 Code :

e3

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

8 ns

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

3175pF @ 15V

Series :

HEXFET®

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

21A Ta

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

21A

Turn On Delay Time :

13 ns

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 21A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.5W Ta

Mount :

Surface Mount

Width :

3.9878mm

ECCN Code :

EAR99

Published :

2009

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

8

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 4.5V

Height :

1.4986mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.35V @ 50μA

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1