IRF8707PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

7.3 ns

Packaging :

Tube

Series :

HEXFET®

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Number of Elements :

1

Number of Terminations :

8

Avalanche Energy Rating (Eas) :

53 mJ

Number of Pins :

8

Recovery Time :

18 ns

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Dual Supply Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

1.8V

Continuous Drain Current (ID) :

11A

Gate Charge (Qg) (Max) @ Vgs :

9.3nC @ 4.5V

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Mount :

Surface Mount

Length :

5mm

Width :

3.9878mm

Height :

1.5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

6.7 ns

ECCN Code :

EAR99

Terminal Position :

Dual

Fall Time (Typ) :

4.4 ns

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 15V

Termination :

SMD/SMT

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Published :

2007

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Terminal Form :

Gull wing

Power Dissipation-Max :

2.5W Ta

Resistance :

11.9mOhm

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

11.9m Ω @ 11A, 10V

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Power Dissipation :

2.5W

Nominal Vgs :

1.8 V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

7.9ns