IRF8513TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Element Configuration :

Dual

Published :

2008

Max Power Dissipation :

2.4W

Operating Temperature :

-55°C~175°C TJ

Base Part Number :

IRF8513PBF

Length :

4.9784mm

Pulsed Drain Current-Max (IDM) :

64A

Terminal Form :

Gull wing

Width :

3.9878mm

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Transistor Application :

SWITCHING

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

49 mJ

Turn-Off Delay Time :

9.3 ns

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

15.5m Ω @ 8A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Number of Elements :

2

Drain Current-Max (Abs) (ID) :

8A

Continuous Drain Current (ID) :

11A

Radiation Hardening :

No

FET Type :

2 N-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.5W

Drain-source On Resistance-Max :

0.0155Ohm

Power - Max :

1.5W 2.4W

Input Capacitance (Ciss) (Max) @ Vds :

766pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

8A 11A

Height :

1.4986mm

Lead Free :

Lead Free

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

8.6nC @ 4.5V

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

30V