IRF8313PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0155Ohm

FET Type :

2 N-Channel (Dual)

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

15.5m Ω @ 9.7A, 10V

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 4.5V

Surface Mount :

yes

Base Part Number :

IRF8313PBF

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

2

DS Breakdown Voltage-Min :

30V

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

9.7A

Transistor Application :

SWITCHING

Published :

2004

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 15V

JEDEC-95 Code :

MS-012AA

Number of Terminations :

8

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

81A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

2W

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

46 mJ

Power Dissipation-Max (Abs) :

2W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G8

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

9.7A

Factory Lead Time :

6 Weeks

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE