IRF7855TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 12A, 10V

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Rise Time :

13ns

Element Configuration :

Single

Terminal Position :

Dual

Vgs (Max) :

±20V

Lead Free :

Lead Free

Resistance :

9.4mOhm

Avalanche Energy Rating (Eas) :

540 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

12 ns

Drain to Source Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

97A

Transistor Element Material :

SILICON

Width :

3.9878mm

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Power Dissipation-Max :

2.5W Ta

Terminal Finish :

Matte Tin (Sn)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

4.9V @ 100μA

Length :

4.9784mm

Turn On Delay Time :

8.7 ns

Power Dissipation :

2.5W

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1560pF @ 25V

Number of Pins :

8

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

12A

Height :

1.4986mm

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Number of Elements :

1

Radiation Hardening :

No

Series :

HEXFET®

Published :

2006

Terminal Form :

Gull wing

Turn-Off Delay Time :

16 ns

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel