IRF7854TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Length :

4.9784mm

Terminal Finish :

MATTE TIN

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

13.4m Ω @ 10A, 10V

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Series :

HEXFET®

Turn On Delay Time :

9.4 ns

Continuous Drain Current (ID) :

10A

Drain to Source Breakdown Voltage :

80V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Transistor Element Material :

SILICON

Fall Time (Typ) :

8.6 ns

Operating Temperature :

-55°C~150°C TJ

Width :

3.9878mm

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Height :

1.4986mm

Number of Elements :

1

JESD-609 Code :

e3

Power Dissipation-Max :

2.5W Ta

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Turn-Off Delay Time :

15 ns

Number of Pins :

8

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pulsed Drain Current-Max (IDM) :

79A

Power Dissipation :

2.5W

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4.9V @ 100μA

Rise Time :

8.5ns

Radiation Hardening :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

1620pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V