IRF7853TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1640pF @ 25V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

REACH SVHC :

Unknown

Height :

1.4986mm

Rise Time :

6.6ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

Number of Pins :

8

Width :

3.9878mm

Published :

2006

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

66A

Rds On (Max) @ Id, Vgs :

18m Ω @ 8.3A, 10V

Vgs(th) (Max) @ Id :

4.9V @ 100μA

Power Dissipation-Max :

2.5W Ta

Series :

HEXFET®

Turn-Off Delay Time :

26 ns

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Factory Lead Time :

12 Weeks

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Fall Time (Typ) :

6 ns

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

100V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Continuous Drain Current (ID) :

8.3A

FET Type :

N-Channel

Turn On Delay Time :

13 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

2.5W

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Length :

4.9784mm

Resistance :

18mOhm