IRF7842TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Termination :

SMD/SMT

FET Type :

N-Channel

Mount :

Surface Mount

Terminal Position :

Dual

ECCN Code :

EAR99

Output Current :

2.5A

Number of Elements :

1

Width :

3.9878mm

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2004

Continuous Drain Current (ID) :

18A

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Voltage - Rated DC :

40V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 20V

Power Dissipation-Max :

2.5W Ta

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Recovery Time :

150 ns

Power Dissipation :

2.5W

Nominal Vgs :

2.25 V

Threshold Voltage :

2.25V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

Height :

1.75mm

Number of Terminations :

8

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

5m Ω @ 17A, 10V

Max Junction Temperature (Tj) :

150°C

Dual Supply Voltage :

40V

Fall Time (Typ) :

5 ns

Transistor Application :

SWITCHING

Lead Free :

Contains Lead, Lead Free

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

5mOhm

Turn On Delay Time :

14 ns

Series :

HEXFET®

Element Configuration :

Single

Rise Time :

12ns

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

40V

Mounting Type :

Surface Mount

Length :

4.9784mm

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Turn-Off Delay Time :

21 ns

Gate to Source Voltage (Vgs) :

20V

Current Rating :

18A