IRF7842TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

5m Ω @ 17A, 10V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

18A

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 20V

JESD-30 Code :

R-PDSO-G8

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

MS-012AA

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.005ohm

Vgs(th) (Max) @ Id :

2.25V @ 250μA

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

HEXFET®

Number of Elements :

1

Published :

2004

Power Dissipation-Max :

2.5W Ta

Drain to Source Voltage (Vdss) :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

18A Ta

DS Breakdown Voltage-Min :

40V

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

8-SOIC (0.154, 3.90mm Width)