IRF7832TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Threshold Voltage :

2.32V

Factory Lead Time :

12 Weeks

Row Spacing :

6.3 mm

Element Configuration :

Single

REACH SVHC :

No SVHC

Number of Terminations :

8

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

30V

Continuous Drain Current (ID) :

20A

Dual Supply Voltage :

30V

Packaging :

Tape and Reel (TR)

Recovery Time :

62 ns

Number of Channels :

1

Width :

3.9878mm

Power Dissipation-Max :

2.5W Ta

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 4.5V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.32V @ 250μA

Lead Free :

Contains Lead, Lead Free

Length :

4.9784mm

Mount :

Surface Mount

Fall Time (Typ) :

13 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~155°C TJ

Turn On Delay Time :

12 ns

ECCN Code :

EAR99

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

4m Ω @ 20A, 10V

Published :

2005

Power Dissipation :

2.5W

Rise Time :

6.7ns

Contact Plating :

Tin

Transistor Application :

SWITCHING

Turn-Off Delay Time :

21 ns

Current Rating :

20A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

Nominal Vgs :

2.32 V

Drain to Source Breakdown Voltage :

30V

Height :

1.75mm

Resistance :

4mOhm

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Mounting Type :

Surface Mount

Terminal Position :

Dual

Transistor Element Material :

SILICON

Series :

HEXFET®

Number of Pins :

8

Termination :

SMD/SMT

Input Capacitance (Ciss) (Max) @ Vds :

4310pF @ 15V

Avalanche Energy Rating (Eas) :

260 mJ

Max Junction Temperature (Tj) :

155°C