IRF7832PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

2.32V @ 250μA

DS Breakdown Voltage-Min :

30V

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Drain Current-Max (Abs) (ID) :

20A

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Surface Mount :

yes

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

160A

Input Capacitance (Ciss) (Max) @ Vds :

4310pF @ 15V

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.004ohm

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

260 mJ

Published :

2005

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

JEDEC-95 Code :

MS-012AA

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.5W Ta

Rds On (Max) @ Id, Vgs :

4m Ω @ 20A, 10V

Operating Temperature :

-55°C~155°C TJ

JESD-30 Code :

R-PDSO-G8

Packaging :

Tube

Number of Terminations :

8

Factory Lead Time :

16 Weeks