IRF7831TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0036Ohm

Surface Mount :

yes

Published :

2005

Input Capacitance (Ciss) (Max) @ Vds :

6240pF @ 15V

Terminal Form :

Gull wing

Number of Elements :

1

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Vgs (Max) :

±12V

Drain Current-Max (Abs) (ID) :

21A

Current - Continuous Drain (Id) @ 25°C :

21A Ta

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

100 mJ

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.35V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

JESD-30 Code :

R-PDSO-G8

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

170A

JESD-609 Code :

e3

Power Dissipation-Max :

2.5W Ta

Number of Terminations :

8

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 4.5V

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 20A, 10V

JEDEC-95 Code :

MS-012AA

DS Breakdown Voltage-Min :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)