IRF7831PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±12V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

21A Ta

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 4.5V

Drain-source On Resistance-Max :

0.0036Ohm

Pulsed Drain Current-Max (IDM) :

170A

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 20A, 10V

Power Dissipation-Max :

2.5W Ta

Mounting Type :

Surface Mount

JEDEC-95 Code :

MS-012AA

JESD-30 Code :

R-PDSO-G8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

6240pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

100 mJ

Published :

2005

Drain Current-Max (Abs) (ID) :

21A

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

30V

Number of Terminations :

8

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.35V @ 250μA

Transistor Application :

SWITCHING

Factory Lead Time :

14 Weeks

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

30V