IRF7822PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2001

RoHS Status :

RoHS Compliant

Width :

3.9878mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 16V

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

30V

Voltage - Rated DC :

30V

Vgs (Max) :

±12V

Dual Supply Voltage :

30V

Max Operating Temperature :

150°C

Operating Temperature :

-55°C~150°C TJ

Input Capacitance :

5.5nF

Rds On (Max) @ Id, Vgs :

6.5mOhm @ 15A, 4.5V

REACH SVHC :

No SVHC

Fall Time (Typ) :

12 ns

Mounting Type :

Surface Mount

Turn On Delay Time :

15 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rise Time :

5.5ns

Power Dissipation :

3.1W

Supplier Device Package :

8-SO

Vgs(th) (Max) @ Id :

1V @ 250μA

Rds On Max :

6.5 mΩ

Continuous Drain Current (ID) :

18A

Power Dissipation-Max :

3.1W Ta

Height :

1.4986mm

Lead Free :

Lead Free

Length :

4.9784mm

Gate to Source Voltage (Vgs) :

12V

Row Spacing :

6.3 mm

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Nominal Vgs :

1 V

Min Operating Temperature :

-55°C

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 5V

Drain to Source Breakdown Voltage :

30V

Current Rating :

18A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Packaging :

Tube

Mount :

Surface Mount

Drain to Source Resistance :

6.5mOhm

Number of Pins :

8

Radiation Hardening :

No

Turn-Off Delay Time :

22 ns

Threshold Voltage :

1V