IRF7821TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Lead Free :

Contains Lead, Lead Free

Series :

HEXFET®

Voltage - Rated DC :

30V

ECCN Code :

EAR99

Resistance :

9.1MOhm

Operating Temperature :

-55°C~155°C TJ

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

Length :

4.9784mm

Power Dissipation-Max :

2.5W Ta

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Dual Supply Voltage :

30V

Number of Channels :

1

Terminal Position :

Dual

Published :

2007

Vgs(th) (Max) @ Id :

1V @ 250μA

Threshold Voltage :

1V

Max Junction Temperature (Tj) :

155°C

Number of Pins :

8

Contact Plating :

Tin

Radiation Hardening :

No

Mounting Type :

Surface Mount

Row Spacing :

6.3 mm

Input Capacitance (Ciss) (Max) @ Vds :

1010pF @ 15V

Rds On (Max) @ Id, Vgs :

9.1m Ω @ 13A, 10V

Turn On Delay Time :

6.3 ns

Width :

3.9878mm

Continuous Drain Current (ID) :

13.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Termination :

SMD/SMT

Factory Lead Time :

12 Weeks

Vgs (Max) :

±20V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Recovery Time :

42 ns

Number of Terminations :

8

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Nominal Vgs :

1 V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

13.6A Ta

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Height :

1.75mm

Power Dissipation :

2.5W

Fall Time (Typ) :

7.3 ns

Rise Time :

2.7ns

Turn-Off Delay Time :

9.7 ns

Current Rating :

13.6A

Avalanche Energy Rating (Eas) :

44 mJ

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING