IRF7815TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

529 mJ

Number of Pins :

8

Mounting Type :

Surface Mount

Element Configuration :

Single

Series :

HEXFET®

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Power Dissipation-Max :

2.5W Ta

Continuous Drain Current (ID) :

5.1A

Packaging :

Tape and Reel (TR)

Length :

4.9784mm

Resistance :

43mOhm

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Fall Time (Typ) :

8.3 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Number of Elements :

1

Terminal Form :

Gull wing

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

5.1A Ta

Input Capacitance (Ciss) (Max) @ Vds :

1647pF @ 75V

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

43m Ω @ 3.1A, 10V

Power Dissipation :

2.5W

Turn On Delay Time :

8.4 ns

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 100µA

Mount :

Surface Mount

Width :

3.9878mm

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

3.2ns

Height :

1.4986mm

ECCN Code :

EAR99

Turn-Off Delay Time :

14 ns

Published :

2008

Drain to Source Breakdown Voltage :

150V