IRF7815PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Rise Time :

3.2ns

Published :

2009

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Turn On Delay Time :

8.4 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2.5W

Width :

3.9878mm

Number of Terminations :

3

Terminal Position :

Dual

Packaging :

Tube

Length :

4.9784mm

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 100µA

Drain to Source Breakdown Voltage :

150V

Power Dissipation-Max :

2.5W Ta

Element Configuration :

Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

529 mJ

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1647pF @ 75V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Radiation Hardening :

No

Case Connection :

DRAIN

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

43m Ω @ 3.1A, 10V

Height :

1.4986mm

Threshold Voltage :

4V

Drain-source On Resistance-Max :

0.043Ohm

Turn-Off Delay Time :

14 ns

Nominal Vgs :

4 V

Fall Time (Typ) :

8.3 ns

JESD-30 Code :

R-PDSO-G3

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Series :

HEXFET®

Continuous Drain Current (ID) :

5.1A

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

5.1A Ta

RoHS Status :

ROHS3 Compliant

Recovery Time :

62 ns