IRF7809AVTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Number of Elements :

1

Mount :

Surface Mount

Lead Free :

Contains Lead, Lead Free

Turn-Off Delay Time :

96 ns

Dual Supply Voltage :

30V

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 5V

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

1 V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Threshold Voltage :

1V

Rds On (Max) @ Id, Vgs :

9m Ω @ 15A, 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Continuous Drain Current (ID) :

13.3A

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

13.3A Ta

Series :

HEXFET®

Element Configuration :

Single

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Pins :

8

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.5W Ta

Fall Time (Typ) :

10 ns

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

12V

Current Rating :

13.3A

Rise Time :

36ns

Height :

1.4986mm

Row Spacing :

6.3 mm

Length :

4.9784mm

Vgs (Max) :

±12V

Voltage - Rated DC :

30V

Terminal Form :

Gull wing

Resistance :

9mOhm

Turn On Delay Time :

14 ns

Power Dissipation :

2.5W

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

RoHS Status :

ROHS3 Compliant

Width :

3.9878mm

Contact Plating :

Tin

REACH SVHC :

No SVHC

FET Type :

N-Channel

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

3780pF @ 16V