IRF7809AV

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Packaging :

Tube

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.5W Ta

Terminal Finish :

Tin/Lead (Sn/Pb)

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Terminations :

8

FET Type :

N-Channel

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3780pF @ 16V

Vgs (Max) :

±12V

Published :

2005

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

245

JESD-30 Code :

R-PDSO-G8

Current - Continuous Drain (Id) @ 25°C :

13.3A Ta

Series :

HEXFET®

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

JESD-609 Code :

e0

JEDEC-95 Code :

MS-012AA

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Terminal Position :

Dual

Mounting Type :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

13.3A

Pulsed Drain Current-Max (IDM) :

100A

Time@Peak Reflow Temperature-Max (s) :

30

DS Breakdown Voltage-Min :

30V

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 5V

Rds On (Max) @ Id, Vgs :

9m Ω @ 15A, 4.5V

Surface Mount :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

HTS Code :

8541.29.00.95

Drain-source On Resistance-Max :

0.009Ohm