IRF7807ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

3.1 ns

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

20V

Length :

4.9784mm

Rds On (Max) @ Id, Vgs :

13.8m Ω @ 11A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Threshold Voltage :

1.8V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

11A

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

11A

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.5W

Power Dissipation-Max :

2.5W Ta

Height :

1.4986mm

Rise Time :

6.2ns

REACH SVHC :

No SVHC

Nominal Vgs :

1.8 V

Lead Free :

Contains Lead, Lead Free

Turn On Delay Time :

6.9 ns

Number of Pins :

8

Series :

HEXFET®

Turn-Off Delay Time :

10 ns

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 15V

Packaging :

Tape and Reel (TR)

Resistance :

8.2mOhm

Published :

2005

Drain to Source Breakdown Voltage :

30V

Width :

3.9878mm

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

30V

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Terminal Position :

Dual

Terminal Form :

Gull wing

Transistor Application :

SWITCHING