IRF7807VD2TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

150°C

Width :

3.9878mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Height :

1.4986mm

Published :

2004

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

RoHS Compliant

Min Operating Temperature :

-55°C

Rds On Max :

25 mΩ

Current Rating :

8.3A

Mounting Type :

Surface Mount

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Series :

FETKY™

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Number of Pins :

8

Power Dissipation-Max :

2.5W Ta

Turn On Delay Time :

6.3 ns

Length :

4.9784mm

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

25mOhm @ 7A, 4.5V

Supplier Device Package :

8-SO

FET Feature :

Schottky Diode (Isolated)

Fall Time (Typ) :

2.2 ns

Continuous Drain Current (ID) :

8.3A

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1V @ 250μA

Rise Time :

1.2ns

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

Turn-Off Delay Time :

1.1 ns

Drain to Source Voltage (Vdss) :

30V

Power Dissipation :

1.6W

Number of Elements :

1

Drain to Source Resistance :

25mOhm

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Voltage - Rated DC :

30V