IRF7807VD2PBF
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- Mfr.Part #
- IRF7807VD2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 8.3A 8SO
- Stock
- 22,240
- In Stock ：
- 22,240
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 25mOhm @ 7A, 4.5V
- Forward Current :
- 3.7A
- Continuous Drain Current (ID) :
- 8.3A
- Power Dissipation-Max :
- 2.5W Ta
- Radiation Hardening :
- No
- Max Operating Temperature :
- 150°C
- Voltage - Rated DC :
- 30V
- Rds On Max :
- 25 mΩ
- Mount :
- Surface Mount
- Rise Time :
- 1.2ns
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 4.5V
- Power Dissipation :
- 2.5W
- Turn-Off Delay Time :
- 1.1 ns
- Number of Pins :
- 8
- Width :
- 3.9878mm
- REACH SVHC :
- No SVHC
- Dual Supply Voltage :
- 30V
- Drain to Source Resistance :
- 25mOhm
- Number of Elements :
- 1
- Threshold Voltage :
- 1V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Turn On Delay Time :
- 6.3 ns
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Published :
- 2004
- Termination :
- SMD/SMT
- Nominal Vgs :
- 1 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V
- Current Rating :
- 8.3A
- Height :
- 1.4986mm
- Series :
- FETKY™
- Supplier Device Package :
- 8-SO
- Resistance :
- 25mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 8.3A Ta
- Length :
- 4.9784mm
- Drain to Source Breakdown Voltage :
- 30V
- Drain to Source Voltage (Vdss) :
- 30V
- Fall Time (Typ) :
- 2.2 ns
- FET Type :
- N-Channel
- Packaging :
- Tube
- Forward Voltage :
- 540mV
- FET Feature :
- Schottky Diode (Isolated)
- Min Operating Temperature :
- -55°C
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Datasheets
- IRF7807VD2PBF
N-Channel Tube 25mOhm @ 7A, 4.5V ±20V 14nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
IRF7807VD2PBF Overview
Its continuous drain current is 8.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 1.1 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 25mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.3 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V) to reduce its overall power consumption.
IRF7807VD2PBF Features
a continuous drain current (ID) of 8.3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 1.1 ns
single MOSFETs transistor is 25mOhm
a threshold voltage of 1V
a 30V drain to source voltage (Vdss)
IRF7807VD2PBF Applications
There are a lot of Infineon Technologies
IRF7807VD2PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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