IRF7807PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±12V

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

1V @ 250μA

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

8.3A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Operating Temperature (Max) :

150°C

JESD-30 Code :

R-PDSO-G8

Number of Elements :

1

Power Dissipation-Max :

2.5W Tc

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.025Ohm

Transistor Application :

SWITCHING

JEDEC-95 Code :

MS-012AA

Published :

2004

FET Type :

N-Channel

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

Number of Terminations :

8

Packaging :

Tube

Surface Mount :

yes

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

25m Ω @ 7A, 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

66A