IRF7807PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-G8

Operating Temperature (Max) :

150°C

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.025Ohm

Power Dissipation-Max :

2.5W Tc

Pulsed Drain Current-Max (IDM) :

66A

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Terminal Form :

Gull wing

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

1V @ 250μA

Surface Mount :

yes

JEDEC-95 Code :

MS-012AA

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±12V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

8.3A

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

25m Ω @ 7A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

30V

Packaging :

Tube

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Number of Terminations :

8

Published :

2004