IRF7807D2TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Continuous Drain Current (ID) :

8.3A

Power Dissipation-Max :

2.5W Ta

Power Dissipation :

1.6W

Width :

3.9878mm

Drain to Source Resistance :

25mOhm

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1V @ 250μA

Current Rating :

8.3A

Min Operating Temperature :

-55°C

Supplier Device Package :

8-SO

Voltage - Rated DC :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Rds On Max :

25 mΩ

Height :

1.4986mm

Max Operating Temperature :

150°C

FET Feature :

Schottky Diode (Isolated)

Drain to Source Breakdown Voltage :

30V

Published :

2004

Series :

FETKY™

Rds On (Max) @ Id, Vgs :

25mOhm @ 7A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

12V

Resistance :

25mOhm

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Number of Elements :

1

Number of Pins :

8

Vgs (Max) :

±12V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Length :

4.9784mm

RoHS Status :

RoHS Compliant