IRF7807D2PBF
- Mfr.Part #
- IRF7807D2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 8.3A 8SO
- Stock
- 29,346
- In Stock :
- 29,346
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 25mOhm @ 7A, 4.5V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Min Operating Temperature :
- -55°C
- Vgs (Max) :
- ±12V
- Height :
- 1.4986mm
- Drain to Source Resistance :
- 25mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 8.3A Ta
- Power Dissipation :
- 2.5W
- Rds On Max :
- 25 mΩ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V
- REACH SVHC :
- No SVHC
- Supplier Device Package :
- 8-SO
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 5V
- Series :
- FETKY™
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Number of Pins :
- 8
- Number of Elements :
- 1
- Power Dissipation-Max :
- 2.5W Ta
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 30V
- Continuous Drain Current (ID) :
- 8.3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 8.3A
- FET Feature :
- Schottky Diode (Isolated)
- Gate to Source Voltage (Vgs) :
- 12V
- Published :
- 2004
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- Nominal Vgs :
- 1 V
- Max Operating Temperature :
- 150°C
- RoHS Status :
- RoHS Compliant
- Width :
- 3.9878mm
- Voltage - Rated DC :
- 30V
- Length :
- 4.9784mm
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IRF7807D2PBF
IRF7807D2PBF Documents

N-Channel Tube 25mOhm @ 7A, 4.5V ±12V 17nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
IRF7807D2PBF Overview
This device has a continuous drain current (ID) of [8.3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.MOSFETs have 25mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V).
IRF7807D2PBF Features
a continuous drain current (ID) of 8.3A
a drain-to-source breakdown voltage of 30V voltage
single MOSFETs transistor is 25mOhm
a 30V drain to source voltage (Vdss)
IRF7807D2PBF Applications
There are a lot of Infineon Technologies
IRF7807D2PBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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