IRF7807D2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

FET Feature :

Schottky Diode (Isolated)

Nominal Vgs :

1 V

Height :

1.4986mm

Voltage - Rated DC :

30V

Current Rating :

8.3A

Min Operating Temperature :

-55°C

Supplier Device Package :

8-SO

Width :

3.9878mm

Drain to Source Resistance :

25mOhm

Max Operating Temperature :

150°C

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Continuous Drain Current (ID) :

8.3A

Radiation Hardening :

No

Number of Elements :

1

Vgs(th) (Max) @ Id :

1V @ 250μA

Published :

2004

REACH SVHC :

No SVHC

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs (Max) :

±12V

Length :

4.9784mm

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

25mOhm @ 7A, 4.5V

FET Type :

N-Channel

Packaging :

Tube

Number of Pins :

8

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Power Dissipation :

2.5W

Rds On Max :

25 mΩ

Gate to Source Voltage (Vgs) :

12V

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

Operating Temperature :

-55°C~150°C TJ

Series :

FETKY™

Power Dissipation-Max :

2.5W Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V