IRF7807D1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

1 V

Height :

1.4986mm

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Power Dissipation-Max :

2.5W Ta

Resistance :

25mOhm

Drain to Source Breakdown Voltage :

30V

Vgs (Max) :

±12V

Mount :

Surface Mount

Forward Voltage :

500mV

Current Rating :

8.3A

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

Termination :

SMD/SMT

Packaging :

Tube

Series :

FETKY™

Voltage - Rated DC :

30V

Gate to Source Voltage (Vgs) :

12V

FET Type :

N-Channel

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Length :

4.9784mm

Radiation Hardening :

No

Power Dissipation :

2.5W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Threshold Voltage :

1V

Number of Elements :

1

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Published :

2004

FET Feature :

Schottky Diode (Isolated)

Element Configuration :

Single

ECCN Code :

EAR99

Continuous Drain Current (ID) :

8.3A

Forward Current :

3.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

25m Ω @ 7A, 4.5V

Width :

3.9878mm

Lead Free :

Lead Free

Number of Pins :

8

Dual Supply Voltage :

30V