IRF7805TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation-Max :

2.5W Ta

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.011Ohm

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

11m Ω @ 7A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±12V

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 5V

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G8

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

100A

JEDEC-95 Code :

MS-012AA

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Factory Lead Time :

12 Weeks

Terminal Form :

Gull wing

Number of Elements :

1

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

30V

Surface Mount :

yes

FET Type :

N-Channel

Transistor Application :

SWITCHING

Series :

HEXFET®

Published :

2007

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

RoHS Status :

ROHS3 Compliant