IRF7799L2TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

36.3 ns

Input Capacitance (Ciss) (Max) @ Vds :

6714pF @ 25V

Terminal Position :

BOTTOM

Turn-Off Delay Time :

73.9 ns

Width :

7.112mm

Transistor Application :

SWITCHING

Power Dissipation-Max :

4.3W Ta 125W Tc

Package / Case :

DirectFET™ Isometric L8

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.038Ohm

Height :

508μm

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

38m Ω @ 21A, 10V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2009

Gate to Source Voltage (Vgs) :

30V

Drain Current-Max (Abs) (ID) :

375A

Drain to Source Breakdown Voltage :

250V

Number of Pins :

11

Rise Time :

33.5ns

Current - Continuous Drain (Id) @ 25°C :

375A Tc

Power Dissipation :

125W

Number of Terminations :

9

REACH SVHC :

No SVHC

Threshold Voltage :

4V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Mounting Type :

Surface Mount

Vgs (Max) :

±30V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

140A

Vgs(th) (Max) @ Id :

5V @ 250μA

Case Connection :

DRAIN

Series :

HEXFET®

JESD-30 Code :

R-XBCC-N9

Avalanche Energy Rating (Eas) :

325 mJ

Continuous Drain Current (ID) :

6.6A

Transistor Element Material :

SILICON

Fall Time (Typ) :

26.6 ns

Length :

9.144mm

ECCN Code :

EAR99