IRF7779L2TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

4V

Series :

HEXFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Length :

9.144mm

Avalanche Energy Rating (Eas) :

270 mJ

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Drain Current-Max (Abs) (ID) :

67A

Pulsed Drain Current-Max (IDM) :

270A

Number of Elements :

1

Turn-Off Delay Time :

36 ns

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

125W

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drain to Source Breakdown Voltage :

150V

Height :

508μm

Vgs(th) (Max) @ Id :

5V @ 250μA

Radiation Hardening :

No

JESD-30 Code :

R-XBCC-N9

Case Connection :

DRAIN

Width :

7.1mm

Turn On Delay Time :

16 ns

Package / Case :

DirectFET™ Isometric L8

Number of Terminations :

9

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

6660pF @ 25V

Published :

2009

Rds On (Max) @ Id, Vgs :

11m Ω @ 40A, 10V

Number of Pins :

11

Mount :

Surface Mount

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

11A

Current - Continuous Drain (Id) @ 25°C :

375A Tc

Terminal Position :

BOTTOM

Rise Time :

19ns

Vgs (Max) :

±20V

Fall Time (Typ) :

12 ns

Lead Free :

Lead Free

Power Dissipation-Max :

3.3W Ta 125W Tc