IRF7769L2TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

375A Tc

Number of Channels :

1

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

676μm

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Length :

9.144mm

Terminal Finish :

TIN SILVER COPPER

Drain Current-Max (Abs) (ID) :

395A

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

92 ns

Drain-source On Resistance-Max :

0.0035Ohm

Max Junction Temperature (Tj) :

175°C

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

20A

Mount :

Surface Mount

JESD-30 Code :

R-XBCC-N9

ECCN Code :

EAR99

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Width :

7.112mm

JESD-609 Code :

e1

Rise Time :

32ns

Recovery Time :

112 ns

Fall Time (Typ) :

41 ns

Transistor Element Material :

SILICON

Power Dissipation :

3.3W

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

BOTTOM

Number of Terminations :

9

Factory Lead Time :

10 Weeks

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

11560pF @ 25V

Pulsed Drain Current-Max (IDM) :

500A

Drain to Source Breakdown Voltage :

100V

Package / Case :

DirectFET™ Isometric L8

Power Dissipation-Max :

3.3W Ta 125W Tc

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

260 mJ

Number of Pins :

11

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 74A, 10V

Mounting Type :

Surface Mount

Published :

2010

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

44 ns

Nominal Vgs :

2.7 V