IRF7769L1TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

Drain to Source Voltage (Vdss) :

100V

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Number of Terminations :

9

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

260 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

3.3W

Number of Elements :

1

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

11560pF @ 25V

Factory Lead Time :

12 Weeks

Rise Time :

32ns

Pulsed Drain Current-Max (IDM) :

500A

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-XBCC-N3

Drain Current-Max (Abs) (ID) :

375A

Number of Pins :

15

Current - Continuous Drain (Id) @ 25°C :

20A Ta 124A Tc

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 74A, 10V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

41 ns

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

44 ns

Turn-Off Delay Time :

92 ns

ECCN Code :

EAR99

Continuous Drain Current (ID) :

124A

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Configuration :

Single

Radiation Hardening :

No

Package / Case :

DirectFET™ Isometric L8

Power Dissipation-Max :

3.3W Ta 125W Tc

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Drain-source On Resistance-Max :

0.0035Ohm

Packaging :

Tape and Reel (TR)