IRF7759L2TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

DirectFET™ Isometric L8

Drain-source On Resistance-Max :

0.0023Ohm

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

26A Ta 375A Tc

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Turn On Delay Time :

18 ns

JESD-609 Code :

e1

Number of Terminations :

9

Rise Time :

87ns

Continuous Drain Current (ID) :

26A

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Series :

HEXFET®

Terminal Position :

BOTTOM

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

12222pF @ 25V

Drain to Source Breakdown Voltage :

75V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 96A, 10V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

3.3W Ta 125W Tc

Pulsed Drain Current-Max (IDM) :

640A

ECCN Code :

EAR99

Threshold Voltage :

3V

JESD-30 Code :

R-XBCC-N9

Width :

7.112mm

Vgs (Max) :

±20V

Height :

508μm

Power Dissipation :

125W

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

80 ns

REACH SVHC :

No SVHC

Radiation Hardening :

No

FET Type :

N-Channel

Fall Time (Typ) :

33 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Number of Pins :

11

Length :

9.144mm

Lead Free :

Lead Free

Published :

2009

Avalanche Energy Rating (Eas) :

257 mJ