IRF7749L2TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

60V

Number of Terminations :

9

Power Dissipation-Max :

3.3W Ta 125W Tc

Input Capacitance (Ciss) (Max) @ Vds :

12320pF @ 25V

Case Connection :

DRAIN

Threshold Voltage :

4V

Gate to Source Voltage (Vgs) :

60V

REACH SVHC :

No SVHC

Series :

HEXFET®

Power Dissipation :

3.8W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

33A

Factory Lead Time :

12 Weeks

Number of Pins :

8

Number of Elements :

1

Width :

7.112mm

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

33A Ta 375A Tc

Fall Time (Typ) :

39 ns

JESD-30 Code :

R-XBCC-N9

Terminal Position :

BOTTOM

Turn-Off Delay Time :

72 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

DirectFET™ Isometric L8

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

375A

Rds On (Max) @ Id, Vgs :

1.5m Ω @ 120A, 10V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

260 mJ

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

RoHS Status :

ROHS3 Compliant

Height :

740μm

Time@Peak Reflow Temperature-Max (s) :

30

Max Junction Temperature (Tj) :

175°C

Rise Time :

43ns

Published :

2009

Length :

9.144mm

Number of Channels :

1

Terminal Finish :

TIN SILVER COPPER

Manufacturer Package Identifier :

IRF7749L2TRPBF

Nominal Vgs :

2.9 V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Mounting Type :

Surface Mount

Turn On Delay Time :

29 ns

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e1

Operating Temperature :

-55°C~175°C TJ