IRF7739L2TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

7.1mm

Height :

508μm

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

Turn On Delay Time :

21 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On Max :

1 MΩ

Recovery Time :

130 ns

Vgs (Max) :

±20V

Published :

2013

Power Dissipation-Max :

3.8W Ta 125W Tc

Supplier Device Package :

DIRECTFET L8

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

1mOhm @ 160A, 10V

Resistance :

1MOhm

Threshold Voltage :

2.8V

Power Dissipation :

125W

Input Capacitance :

11.88nF

Rise Time :

71ns

Turn-Off Delay Time :

56 ns

Max Operating Temperature :

175°C

Mount :

Surface Mount

Number of Elements :

1

Package / Case :

DirectFET™ Isometric L8

Input Capacitance (Ciss) (Max) @ Vds :

11880pF @ 25V

Fall Time (Typ) :

42 ns

Series :

HEXFET®

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

46A Ta 375A Tc

Nominal Vgs :

2.8 V

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

40V

Length :

9.144mm

Continuous Drain Current (ID) :

46A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

40V

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Number of Pins :

8

RoHS Status :

RoHS Compliant

Min Operating Temperature :

-55°C

Drain to Source Resistance :

1MOhm

REACH SVHC :

No SVHC

Radiation Hardening :

No