IRF7705TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Drain to Source Breakdown Voltage :

-30V

Mount :

Surface Mount

Nominal Vgs :

-2.5 V

Min Operating Temperature :

-55°C

Fall Time (Typ) :

128 ns

Threshold Voltage :

-2.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Supplier Device Package :

8-TSSOP

Width :

4.4958mm

Turn On Delay Time :

18 ns

Vgs (Max) :

±20V

Resistance :

18mOhm

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Current - Continuous Drain (Id) @ 25°C :

8A Tc

RoHS Status :

RoHS Compliant

Dual Supply Voltage :

-30V

Height :

1.0414mm

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

18mOhm @ 8A, 10V

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Max Operating Temperature :

150°C

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

2774pF @ 25V

Rds On Max :

18 mΩ

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Input Capacitance :

2.774nF

Gate Charge (Qg) (Max) @ Vgs :

88nC @ 10V

Published :

2008

Drain to Source Resistance :

30mOhm

Power Dissipation :

1.5W

Radiation Hardening :

No

REACH SVHC :

No SVHC

FET Type :

P-Channel

Rise Time :

35ns

Termination :

SMD/SMT

Continuous Drain Current (ID) :

-8A

Length :

3.0988mm

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

270 ns

Power Dissipation-Max :

1.5W Ta