IRF7705

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

JEDEC-95 Code :

MO-153AA

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

88nC @ 10V

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.018Ohm

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

18m Ω @ 8A, 10V

Drain Current-Max (Abs) (ID) :

8A

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

30

Qualification Status :

Not Qualified

Published :

2001

DS Breakdown Voltage-Min :

30V

Drain to Source Voltage (Vdss) :

30V

Peak Reflow Temperature (Cel) :

260

Additional Feature :

High Reliability

Input Capacitance (Ciss) (Max) @ Vds :

2774pF @ 25V

Number of Terminations :

8

JESD-609 Code :

e3

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

30A

JESD-30 Code :

R-PDSO-G8

Vgs (Max) :

±20V

Packaging :

Tube

Power Dissipation-Max :

1.5W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

FET Type :

P-Channel

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Mounting Type :

Surface Mount