IRF7703

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.5W Ta

Number of Terminations :

8

Series :

HEXFET®

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Voltage (Vdss) :

40V

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

6A

FET Type :

P-Channel

Transistor Application :

SWITCHING

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

28m Ω @ 6A, 10V

Terminal Form :

Gull wing

Mount :

Surface Mount

Current Rating :

-6A

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

6A

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Qualification Status :

Not Qualified

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

MATTE TIN

Published :

2005

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

5220pF @ 25V

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

24A

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

-40V

Peak Reflow Temperature (Cel) :

260

Lead Free :

Contains Lead

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Additional Feature :

High Reliability

Power Dissipation :

1.5W

Vgs (Max) :

±20V

ECCN Code :

EAR99