IRF7700

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

MO-153AA

Drain-source On Resistance-Max :

0.015Ohm

Drain to Source Voltage (Vdss) :

20V

Power Dissipation-Max :

1.5W Tc

Number of Terminations :

8

Packaging :

Tube

DS Breakdown Voltage-Min :

20V

Rds On (Max) @ Id, Vgs :

15m Ω @ 8.6A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

8.6A Tc

Terminal Form :

Gull wing

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Pulsed Drain Current-Max (IDM) :

68A

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 15V

ECCN Code :

EAR99

FET Type :

P-Channel

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

8.6A

Published :

2007

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 5V

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±12V

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

High Reliability

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

JESD-30 Code :

R-PDSO-G8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

Series :

HEXFET®

Number of Elements :

1