IRF7606TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

29A

Rise Time :

20ns

Voltage - Rated DC :

-30V

Power Dissipation :

1.8W

Lead Free :

Contains Lead

Current Rating :

-3.6A

RoHS Status :

Non-RoHS Compliant

Series :

HEXFET®

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

S-PDSO-G8

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Resistance :

90mOhm

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.4A, 10V

FET Type :

P-Channel

Terminal Form :

Gull wing

ECCN Code :

EAR99

JESD-609 Code :

e3

Power Dissipation-Max :

1.8W Ta

Vgs(th) (Max) @ Id :

1V @ 250μA

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2002

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Continuous Drain Current (ID) :

-3.6A

Mounting Type :

Surface Mount

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Operating Mode :

ENHANCEMENT MODE