IRF7601TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 15V

Fall Time (Typ) :

32 ns

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

700mV @ 250μA

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Width :

3mm

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Rise Time :

47ns

Mounting Type :

Surface Mount

Turn-Off Delay Time :

24 ns

Number of Elements :

1

Number of Pins :

8

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

5.7A Ta

Terminal Form :

Gull wing

Series :

HEXFET®

Transistor Element Material :

SILICON

Additional Feature :

ULTRA LOW RESISTANCE

Continuous Drain Current (ID) :

5.7A

Power Dissipation-Max :

1.8W Ta

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Height :

860μm

Drain-source On Resistance-Max :

0.035Ohm

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Vgs (Max) :

±12V

RoHS Status :

ROHS3 Compliant

Length :

3mm

Turn On Delay Time :

5.1 ns

Published :

1997

Power Dissipation :

1.8W

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

12V

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

20V

Rds On (Max) @ Id, Vgs :

35m Ω @ 3.8A, 4.5V

Pulsed Drain Current-Max (IDM) :

30A