IRF7601TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5.7A Ta

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.035Ohm

Mounting Type :

Surface Mount

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Position :

Dual

FET Type :

N-Channel

Series :

HEXFET®

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Published :

1997

Number of Elements :

1

Drain to Source Voltage (Vdss) :

20V

Packaging :

Cut Tape (CT)

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

30A

Vgs(th) (Max) @ Id :

700mV @ 250μA

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 15V

Drain Current-Max (Abs) (ID) :

5.7A

JESD-30 Code :

R-PDSO-G8

Surface Mount :

yes

DS Breakdown Voltage-Min :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

35m Ω @ 3.8A, 4.5V

Number of Terminations :

8