IRF7601PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

1.8W Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 15V

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G8

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

30A

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

5.7A

Drain to Source Voltage (Vdss) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Packaging :

Tube

Transistor Element Material :

SILICON

Surface Mount :

yes

Additional Feature :

High Reliability

DS Breakdown Voltage-Min :

20V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Qualification Status :

Not Qualified

Number of Elements :

1

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.035Ohm

Current - Continuous Drain (Id) @ 25°C :

5.7A Ta

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

35m Ω @ 3.8A, 4.5V

Vgs (Max) :

±12V

Series :

HEXFET®

Number of Terminations :

8

Published :

2005

Vgs(th) (Max) @ Id :

700mV @ 250μA