IRF7601PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

High Reliability

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

20V

Pulsed Drain Current-Max (IDM) :

30A

Rds On (Max) @ Id, Vgs :

35m Ω @ 3.8A, 4.5V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 15V

Transistor Application :

SWITCHING

Vgs (Max) :

±12V

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

HEXFET®

Transistor Element Material :

SILICON

Surface Mount :

yes

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Published :

2005

Current - Continuous Drain (Id) @ 25°C :

5.7A Ta

Drain-source On Resistance-Max :

0.035Ohm

Number of Elements :

1

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

700mV @ 250μA

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G8

Packaging :

Tube

Drain to Source Voltage (Vdss) :

20V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Power Dissipation-Max :

1.8W Ta

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Drain Current-Max (Abs) (ID) :

5.7A

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel