IRF7495TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead, Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Published :

2004

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Voltage - Rated DC :

100V

Continuous Drain Current (ID) :

7.3A

Drain to Source Breakdown Voltage :

100V

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2.5W

Terminal Form :

Gull wing

Terminal Position :

Dual

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Surface Mount

Turn-Off Delay Time :

10 ns

Current Rating :

7.3A

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Threshold Voltage :

4V

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

22m Ω @ 4.4A, 10V

FET Type :

N-Channel

Number of Terminations :

8

Vgs (Max) :

±20V

Length :

4.9784mm

Power Dissipation-Max :

2.5W Ta

Termination :

SMD/SMT

Nominal Vgs :

4 V

Number of Pins :

8

Width :

3.9878mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

1

Fall Time (Typ) :

36 ns

Height :

1.4986mm

Input Capacitance (Ciss) (Max) @ Vds :

1530pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Transistor Application :

SWITCHING

Radiation Hardening :

No

Resistance :

22mOhm

Rise Time :

13ns

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

7.3A Ta

Turn On Delay Time :

8.7 ns

RoHS Status :

ROHS3 Compliant

Dual Supply Voltage :

100V

Terminal Finish :

Matte Tin (Sn)