IRF7495TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

7.3A

Lead Free :

Contains Lead

Vgs (Max) :

±20V

Series :

HEXFET®

Radiation Hardening :

No

Continuous Drain Current (ID) :

7.3A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ

Published :

2003

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

13ns

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

Non-RoHS Compliant

Drain-source On Resistance-Max :

0.022Ohm

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Number of Elements :

1

Number of Terminations :

8

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.5W Ta

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

100V

Mounting Type :

Surface Mount

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

22m Ω @ 4.4A, 10V

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

100V

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

7.3A Ta

Power Dissipation :

2.5W

Input Capacitance (Ciss) (Max) @ Vds :

1530pF @ 25V

Terminal Finish :

Matte Tin (Sn)