IRF7495PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

MS-012AA

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1530pF @ 25V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

58A

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

Matte Tin (Sn)

Published :

2003

Surface Mount :

yes

Drain-source On Resistance-Max :

0.022Ohm

Factory Lead Time :

12 Weeks

JESD-30 Code :

R-PDSO-G8

Avalanche Energy Rating (Eas) :

180 mJ

Drain to Source Voltage (Vdss) :

100V

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

7.3A

Current - Continuous Drain (Id) @ 25°C :

7.3A Ta

Terminal Position :

Dual

Power Dissipation-Max :

2.5W Ta

Number of Terminations :

8

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

FET Type :

N-Channel

Number of Elements :

1

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

22m Ω @ 4.4A, 10V