IRF7494PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

4 V

Published :

2008

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

5.2A

Power Dissipation :

3W

Rds On Max :

44 mΩ

Rds On (Max) @ Id, Vgs :

44mOhm @ 3.1A, 10V

Number of Pins :

8

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1783pF @ 25V

Number of Elements :

1

Width :

3.9878mm

Vgs (Max) :

±20V

FET Type :

N-Channel

Termination :

SMD/SMT

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Resistance :

44mOhm

Height :

1.4986mm

Input Capacitance :

1.75nF

Drain to Source Resistance :

44mOhm

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

150V

Dual Supply Voltage :

150V

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

5.1A Ta

Power Dissipation-Max :

2.5W Ta

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

9 ns

Fall Time (Typ) :

14 ns

Supplier Device Package :

8-SO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

4V

Series :

HEXFET®

Turn-Off Delay Time :

29 ns

Max Operating Temperature :

150°C

Packaging :

Tube

Drain to Source Voltage (Vdss) :

150V

REACH SVHC :

No SVHC

Rise Time :

10ns

Length :

4.9784mm