IRF7493TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

ECCN Code :

EAR99

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Mounting Type :

Surface Mount

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1510pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

7.5ns

Power Dissipation :

2.5W

Drain-source On Resistance-Max :

0.015Ohm

Series :

HEXFET®

Voltage - Rated DC :

80V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Drain to Source Breakdown Voltage :

80V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

15m Ω @ 5.6A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Lead Free :

Contains Lead

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

9.3A

Current Rating :

9.3A

Published :

2001

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

MS-012AA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

2.5W Tc

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

9.3A Tc

Pulsed Drain Current-Max (IDM) :

74A

Configuration :

SINGLE WITH BUILT-IN DIODE