IRF7490TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1720pF @ 25V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

100V

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

43A

Resistance :

39mOhm

Radiation Hardening :

No

Nominal Vgs :

4 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

11 ns

Contact Plating :

Tin

Height :

1.4986mm

Lead Free :

Lead Free

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

4V

Factory Lead Time :

12 Weeks

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Number of Elements :

1

Voltage - Rated DC :

100V

Power Dissipation :

2.5W

Published :

2002

Rise Time :

4.2ns

Continuous Drain Current (ID) :

5.4A

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

5.4A Ta

Vgs (Max) :

±20V

Series :

HEXFET®

Row Spacing :

6.3 mm

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Current Rating :

5.4A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

3.9878mm

Mount :

Surface Mount

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Turn-Off Delay Time :

51 ns

Terminal Form :

Gull wing

Number of Terminations :

8

Dual Supply Voltage :

100V

Rds On (Max) @ Id, Vgs :

39m Ω @ 3.2A, 10V

Turn On Delay Time :

13 ns

FET Type :

N-Channel

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Length :

4.9784mm

Power Dissipation-Max :

2.5W Ta

Operating Temperature :

-55°C~150°C TJ