IRF7490PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G8

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

43A

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.039Ohm

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

39m Ω @ 3.2A, 10V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

100V

ECCN Code :

EAR99

JEDEC-95 Code :

MS-012AA

FET Type :

N-Channel

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.5W Ta

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2002

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

100V

Number of Terminations :

8

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1720pF @ 25V

Avalanche Energy Rating (Eas) :

91 mJ

Current - Continuous Drain (Id) @ 25°C :

5.4A Ta

Drain Current-Max (Abs) (ID) :

5.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Series :

HEXFET®